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MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA02M8087MD
BLOCK DIAGRAM
2 3 4
RoHS Compliance , 806-869MHz 34dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION The RA02M8087MD is a 34 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the 806 to 869 MHz range.
1
5 6
FEATURES * Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=7.2V, VGG=0V) * Pout>34dBm @ VDD=7.2V, Pin=16dBm Idq1=20mA(Vgg1adjust.),Idq2=300mA(Vgg2 adjust.) , @ VDD=7.2V, Pout=34dBm (Pin adjust.), * T>30% Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.) * IMD3<-26dBc @ VDD=7.2V, Pout (average) =31dBm (Pin adjust.) Two tone test at 1KHz separation Idq1=20mA(Vgg1 adjust.),Idq2=300mA(Vgg2 adjust.) * Broadband Frequency Range: 806-869MHz * Low-Power Adjust. Current IGG=1mA (typ) at VGG=3.5V * Module Size: 30 x 10 x 5.4 mm
1 RF Input (Pin) 2 FIRST STAGE GATE BIAS DC SUPPLY TERMINAL Vgg1 3 FINAL STAGE GATE BIAS DC SUPPLY TERMINAL Vgg2 4 Drain Voltage (VDD), Battery 5 RF Output (Pout) 6 RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANT * RA02M8087MD-101 is a RoHS compliant products. * RoHS compliance is indicate by the letter "G" after the Lot Marking. * This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts.
ORDERING INFORMATION: ORDER NUMBER RA02M8087MD-101 SUPPLY FORM Antistatic tray, 25 modules/tray
RA02M8087MD
MITSUBISHI ELECTRIC 1/7
31 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANT
RA02M8087MD
MAXIMUM RATINGS (Tcase=+25C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG1 VGG2 Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<3.5V VDD<7.2V, Pin=0mW VDD<7.2V, Pin=0mW f=806-869MHz, ZG=ZL=50 RATING 9.2 4 4 100 5 -30 to +90 -40 to +110 UNIT V V V mW W C C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo in IGG IMD3 IMD5 Frequency Range Output Power Total Efficiency 2
nd
CONDITIONS
VDD=7.2V,Pin(Single Carrier)=+16dBm, Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) VDD=7.2V,Pout (Single Carrier) =34dBm (,Pin adjust.), Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.)
MIN
806 34 30
TYP
MAX
869
UNIT
MHz dBm %
Harmonic
-30 5.8:1 1
dBc -- mA
Input VSWR Gate Current 3 Inter Modulation Distortion 5 Inter Modulation Distortion
th rd
VDD=7.2V,Pout (average)=31dBm(Pin adjust.), Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) , Two tone test at 1KHz separation VDD=7.2V,Pout (Single Carrier)=34dBm(Pin adjust.), Across specified frequency range Idq1=20mA(Vgg1 adjust.), Idq2=300mA(Vgg2 adjust.) Vdd=6.0/7.2/9.2V, Idq1=20mA(Vgg1 adjust), Idq2=300mA(Vgg2 adjust) , Po(Single Carrier)=15-34dBm(Pin control) LOAD VSWR=2:1(All Phase),Zg=50 Vdd=9.2V, Pout(Single Carrier)=34dBm (Pin adjust.), LOAD VSWR=2:1(All Phase),Zg=50 , Idq1=20mA(Vgg1 adjust.@Vdd=7.2V), Idq2=300mA(Vgg2 adjust.@Vdd=7.2V)
-26 -30
dBc dBc
GV
Gain Variation
0
4
dB
--
Stability
No parasitic oscillation
--
--
Load VSWR Tolerance
No degradation or destroy
--
All parameters, conditions, ratings, and limits are subject to change without notice.
RA02M8087MD
MITSUBISHI ELECTRIC 2/7
31 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANT
RA02M8087MD
RA02M8087MD IMD3,IMD5 vs. Po T c=+25deg.C, Vdd=7.2V f=806MHz, Idq 1st stager=20mA Idq Final Stage=300mA
TYPICAL PERFORMANCE (Tcase=+25C, ZG=ZL=50, unless otherwise specified)
RA02M8087MD
Effi vs. Po T c=+25deg.C, Vdd=7.2V f=806MHz, Idq 1st stager=20mA Idq Final Stage=300mA 50 45 Effi(%),Gp(dB) 40 35 30 25 20 15 10 5 0 10 15 20 25 30 35 40 Po(single carrie r)(dBm) Gp IMD3,IMD5(dBc) Effi 0 -10 -20 -30 -40 -50 -60 -70 15 20 25 30 35 40 Po(2tone average)(dBm) RA02M8087MD IMD3,IMD5 vs. Po T c=+25deg.C, Vdd=7.2V f=824MHz, Idq 1st stager=20mA Idq Final Stage=300mA 0 Gp IMD3,IMD5(dBc) Effi -10 -20 -30 -40 -50 -60 -70 10 15 20 25 30 35 40 15 20 25 30 35 40 Po(single carrie r)(dBm) Po(2tone average)(dBm) RA02M8087MD IMD3,IMD5 vs. Po T c=+25deg.C, Vdd=7.2V f=851MHz, Idq 1st stager=20mA Idq Final Stage=300mA 0 Gp IMD3,IMD5(dBc) Effi -10 -20 -30 -40 -50 -60 -70 10 15 20 25 30 35 40 15 20 25 30 35 40 Po(single carrie r)(dBm) Po(2tone average)(dBm) RA02M8087MD IMD3,IMD5 vs. Po T c=+25deg.C, Vdd=7.2V f=869MHz, Idq 1st stager=20mA Idq Final Stage=300mA 0 Gp IMD3,IMD5(dBc) Effi -10 -20 -30 -40 -50 -60 -70 10 15 20 25 30 35 40 15 20 25 30 35 40 Po(single carrie r)(dBm) Po(2tone average )(dBm) IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz) IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz) IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz) IMD3(Delta freq=1KHz) IMD5(Delta freq=1KHz)
RA02M8087MD
Effi vs. Po T c=+25deg.C, Vdd=7.2V f=824MHz, Idq 1st stager=20mA Idq Final Stage=300mA 50 45 Effi(%),Gp(dB) 40 35 30 25 20 15 10 5 0
RA02M8087MD
Effi vs. Po T c=+25deg.C, Vdd=7.2V f=851MHz, Idq 1st stager=20mA Idq Final Stage=300mA 50 45 Effi(%),Gp(dB) 40 35 30 25 20 15 10 5 0
RA02M8087MD
Effi vs. Po T c=+25deg.C, Vdd=7.2V f=869MHz, Idq 1st stager=20mA Idq Final Stage=300mA 50 45 Effi(%),Gp(dB) 40 35 30 25 20 15 10 5 0
RA02M8087MD
MITSUBISHI ELECTRIC 3/7
31 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANT
RA02M8087MD
OUTLINE DRAWING (mm)
1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case)
RA02M8087MD
MITSUBISHI ELECTRIC 4/7
31 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANT
RA02M8087MD
TEST BLOCK DIAGRAM (TWO TONE)
TEST BLOCK DIAGRAM (SINGLE CARRIER)
1 RF Input (Pin) 2 Gate Voltage (VGG1) 3 Gate Voltage (VGG2) 4 Drain Voltage (VDD) 5 RF Output (Pout) 6 RF Ground (Case)
RA02M8087MD
MITSUBISHI ELECTRIC 5/7
31 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANT
RA02M8087MD
EQUIVALENT CIRCUIT
2
3
4
5 1 6
1 RF Input (Pin) 2 Gate Voltage (VGG1) 3 Gate Voltage (VGG2) 4 Drain Voltage (VDD) 5 RF Output (Pout) 6 RF Ground (Case)
RA02M8087MD
MITSUBISHI ELECTRIC 6/7
31 Jan 2007
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE RoHS COMPLIANT
RA02M8087MD
Output Power Adjust.: Depending on linearity, the following two methods are recommended to adjust. the output power: a) Non-linear FM modulation: By the gate voltage (VGG). b) Linear modulation: By RF input power Pin. The gate voltage is used to set the drain's quiescent current for the required linearity. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 F (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module. b) Is the load impedance ZL=50. c) Is the source impedance ZG=50. Frequent on/off switching: In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress. Quality: Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios. This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap.
RA02M8087MD
MITSUBISHI ELECTRIC 7/7
31 Jan 2007

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